Electric-field-induced submicrosecond resistive switching
نویسندگان
چکیده
منابع مشابه
Electric-field-induced submicrosecond resistive switching
Electric-field-induced resistive switching in metal-oxide interfaces has attracted extensive recent interest. While many agree that lattice defects play a key role, details of the physical processes are far from clear. There is debate, for example, regarding whether the electromigration of pre-existing point defects or the field-created larger lattice defects dominates the switch. We investigat...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2008
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.78.235418